[21p-P07-1~2] 15.7 Crystal characterization, impurities and crystal defects

[21p-P07-1] Mode of the propagation of stacking faults in substrates during CVD diamond homoepitaxy

〇Nobuteru Tsubouchi¹ (1.AIST)

Keywords:

dislocation,stacking fault

We have investigated how configurations of stacking faults in (001)-oriented single crystal diamond substrates changed and extended in the film during homoepitaxial diamond growth by chemical vapor deposition using various microscopes. The high-temperature, high-pressure synthetic (001) oriented single crystal diamond plates were employed for the substrates. We found that at the interface between the film and the substrate, SFs in the substrate converted to threading dislocation rows that travel nearly along the [001] direction.