[21p-P09-1~30] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-P09-19] Anisotropy of optical bandgap in β-(Ga_1-xAl_x)₂O₃ (x≤0.4)

〇(M2)Hiro Shimizu¹, Shoko Furukawa¹, Akio Yamanaka¹ (1.Chitose Inst. Sci. and Tech.)

Keywords:

Wide bandgap semiconductor