Session Details
[21p-P09-1~30]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Thu. Sep 21, 2023 1:30 PM - 3:30 PM JST
Thu. Sep 21, 2023 4:30 AM - 6:30 AM UTC
Thu. Sep 21, 2023 4:30 AM - 6:30 AM UTC
P09 (KJ Hall)
[21p-P09-1]Diagnostics of Ti(acac)2(OiPr)2 mist fragment using Q-mass spectrometer
〇Hajime Shirai1, Koujun Yokoyama1 (1.Saitama Univ,)
[21p-P09-2]Influence of excimer laser irradiation conditions on solid-phase crystallization of amorphous Ga2O3 thin films and fabrication of the surface microstructures
〇Daishi Shiojiri1, Ryoya Kai2, Kaneko Satoru1,2, Matsuda Akifumi2, Yoshimoto Mamoru2 (1.KISTEC, 2.Tokyo Tech)
[21p-P09-3]Low-temperature deposition of crystalline zinc oxide film using high-power pulsed magnetron sputtering
〇(M2)Katsunori Nagahashi1, Takayuki Ohta1 (1.Meijo Univ.)
[21p-P09-4]Study on Deposition and Evaluation of Gallium Oxide Thin Films by RF Magnetron Sputtering
〇Shunsuke Takahashi1, Shinzo Yoshikado1, Kenji Sakai1, Yuuki Sato1 (1.Doshisha University)
[21p-P09-5]Effect of oxygen partial pressure on Cu2O formation by thermal oxidation
〇Yusuke Ota1, Shinsuke Miyajima1 (1.Tokyo Tech)
[21p-P09-6]Growth of atomically flat (ZnO)x(InN)1-x films on lattice mismatched substrates via inverted Stranski-Krastanov mode
〇Yutaro Nakano1, Ryota Narishige1, Naoto Yamashita1, Kunihiro Kamataki1, Takamasa Okumura1, Kazunori Koga1, Masaharu Shiratani1, Haruki Kiyama1, Hisato Yabuta1, Naho Itagaki1 (1.Kyushu Univ.)
[21p-P09-7]Precursor dependence of growth rates of Ga2O3 films grown by mist-CVD method
〇Kazuaki Akaiwa1, Kunio Ichino1, Isao Takahashi2, Koichi Kakimoto2, Akira Yoshikawa2 (1.Tottori Univ., 2.Tohoku Univ.)
[21p-P09-8]Room-temperature epitaxial growth of (ZnO)x(InN)1-x films on stepped ZnO and ScAlMgO4 substrates
〇Ryota Narishige1, Yutaro Nakano1, Naoto Yamashita1, Kunihiro Kamataki1, Takamasa Okumura1, Haruki Kiyama1, Kazunori Koga1, Masaharu Shiratani1, Hisato Yabuta1, Naho Itagaki1 (1.Kyushu Univ.)
[21p-P09-9]Analysis of β-Ga2O3(010) surface structure using first-principles calculations
〇(M2)Tomoki Yasuda1, Takahiro Kawamura1, Toru Akiyama1 (1.Mie Univ.)
[21p-P09-10]Effects of growth temperature of 3D island buffer layers on the sputtering deposition of single crystalline Zn1-xMgxO films
〇Kotaro Yataka1, Takahumi Yunoue1, Naoto Yamashita1, Takamasa Okumura1, Kunihiro Kamataki1, Kazunori Koga1, Masaharu Shiratani1, Naho Itagaki1 (1.Kyushu Univ.)
[21p-P09-11]Growth of single crystalline ZnO films on sapphire substrates via inverted Stranski-Krastanov mode: Effects of MgO buffer layers
〇Takafumi Yunoue1, Koutaro Yataka1, Naoto Yamashita1, Daisuke Yamashita1, Takamasa Okumura1, Kunihiro Kamataki1, Haruki Kiyama1, Kazunori Koga1, Hasaharu Shiratani1, Naho Itagaki1 (1.Kyushu Univ.)
[21p-P09-12]Mist CVD Growth of High Mg-content Rocksalt-Structured MgZnO Films
〇Kotaro Ogawa1, Wataru Kosaka1, Hiroya Kusaka1, Toshiki Mitomi1, Tomohiro Yamaguchi1, Tohru Honda1, Yuichi Ota2, Kentaro Kaneko3, Shizuo Fujita4, Takeyoshi Onuma1 (1.Kogakuin Univ., 2.TIRI, 3.Ritsumeikan Univ., 4.Kyoto Univ.)
[21p-P09-13]Growth of single-crystalline ZnO layer by UHV sputter epitaxy method
〇Ryota Misawa1, Keisuke Yoshida1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (1.Tokyo Denki Univ.)
[21p-P09-14]NiO thin film deposition using nickel ammine complex
〇Tasuku Kubota1, Koji Abe1 (1.Nagoya Inst. Tech.)
[21p-P09-15]Mist CVD Growth of α-GIO Alloy and its Application for α-ray Detector
〇(M2)Kai Yamada1, Kotono Yamada1, Rie Yamada1, Takumi Yamamoto1, Tatsuhiro Sakurai2, Takeyoshi Onuma1, Tomohiro Yamaguchi1, Tohru Aoki2, Takayuki Nakano2, Tohru Honda1 (1.Kogakuin Univ., 2.Shizuoka Univ.)
[21p-P09-16]Impact of incubation time for Sn solution in Mist CVD growth of Sn-doped α-Ga2O3 thin film
〇(M1)Kotono Yamada1, Takumi Yamamoto1, Rie Yamada1, Kai Yamada1, Hiroki Nagai1, Takeyosi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1 (1.Kogakuin Univ.)
[21p-P09-17]Investigation of initial growth of α-Ga2O3 in mist-CVD
〇Hiroto Tamura1, Kazuyuki Uno1 (1.Wakayama Univ.)
[21p-P09-18]Evaluation of electronic states and band offsets of β-(ScxGa1−x)2O3 thin films
〇Kazuki koreishi1, Takuto Soma1, Hiroshi Kumigashira2,3, Akira Ohtomo1 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.Tohoku Univ., IMRAM, 3.KEK-IMSS)
[21p-P09-19]Anisotropy of optical bandgap in β-(Ga1-xAlx)2O3 (x≤0.4)
〇(M2)Hiro Shimizu1, Shoko Furukawa1, Akio Yamanaka1 (1.Chitose Inst. Sci. and Tech.)
[21p-P09-20]Temperature characteristics of photocurrent in ZnGa2O4 thin films prepared using hydrothermally synthesized nanoparticles
〇Satoshi Ishii1, Reiya Kase1, Takayuki Nakane2, Takashi Naka2 (1.Tokyo Denki Univ., 2.NIMS)
[21p-P09-21]Effect of Oxygen Flow Rate on Electrical Conduction in Cu and N co-doped ZnO Films
〇(M1)Masaki Tanaka1, Hiroshi Katsumata1 (1.Meiji Univ.)
[21p-P09-22]Evaluation of cross-sectional stress distribution of β-Ga2O3(001) wafer applied with bending stress using Micro-Raman spectroscopy
〇Issei Maeda1, Yuuki Hasuike1, Noriyuki Hasuike1, Toshiyuki Isshiki1, Kenji Kobayashi2 (1.Kyoto Inst. Tech., 2.Hitachi High-Tech)
[21p-P09-23]Heavy Si doping of β-Ga2O3 thin film on Sapphire substrate grown by APMOVPE
〇Shun Ukita1, Takeyoshi Tajiri1, Kazuo Uchida1 (1.UEC)
[21p-P09-24]Thickness dependence of resistivity in GZO films fabricated by Zn-supply sputtering
〇Yuugo Tamai1 (1.Uhimane Univ.)
[21p-P09-25]Fabrication of ZnO films by Solid Phase Crystallization of ZnON films for Seed Layers of Transparent Conducting Oxides: Effects of crystallization degree of ZnON films
〇Yoshiharu Wada1, Zhien Shen1, Yabuta Hisato1, Yamashita Naoto1, Okumura Takamasa1, Kamataki Kunihiro1, Koga Kazunori1, Shiratani Masaharu1, Itagaki Naho1 (1.Kyushu-University)
[21p-P09-26]Negative differential resistance observed on Ga-Sn-O thin-film ReRAM
〇(B)Mikami Sota1, Kimura Mutsumi1, Miyato Yuji1 (1.Ryukoku Univ)
[21p-P09-27]Effect of Polyimide Flexible Substrates for Electrical Properties of NiO-based Solar Cells
〇Yuna Koide1, Keito Okubo1, Keisuke Tomono1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci, 2.RIST)
[21p-P09-28]Optical Response and Carrier Transport in PEDOT:PSS/ZnO Nanorods/GZO Heterojunction Devices
〇Tomoaki Terasako1, Masakazu Yagi2, Tetsuya Yamamoto3 (1.Grad. School of Sci. and Eng. Ehime Univ., 2.Natl. Inst. Technol., Kagawa Coll., 3.Kochi Univ. Technol., Res. Int.)
[21p-P09-29]Temperature and HCl partial pressure dependences of HCl gas etching for (001) β-Ga2O3 substrates
Yuichi Oshima1, 〇Takayoshi Oshima1 (1.NIMS)
[21p-P09-30]Investigation of flexible CO2 gas sensors based on transfer of SnO2 thin film with NaCl sacrificial layer
〇Taisei Hattori1, Takuto Maeda1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)