Presentation Information
[22a-A201-9]Influence of Electric Field during Holding Time on Imprint Characteristics in Hf0.5Zr0.5O2 MFM Capacitors
〇Zhenhong Liu1, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1.Tokyo Univ.)
Keywords:
Hafnia-based ferroelectrics,reliability,imprint
Hafnia-based ferroelectrics have strongly revitalized the field of ferroelectric memory, because of the superior ferroelectric properties in thin films and high compatibility with the Si CMOS platform. However, reliability issues such as wake-up, fatigue, and imprint need to be satisfactorily resolved for actual applications. Among them, the imprint effect is an important issue because it could cause serious retention or write failure problems. Here, many models such as charge injection, charge movement, and oxygen vacancy diffusion have been proposed as the physical origin of imprint. In this work, we applied an additional electric field (Eh) to HZO MFM capacitors during holding time and obtained evidence that charge injection/de-trapping near the MF interface can take an important role in imprint.