Session Details
[22a-A201-1~12]CS.8 Code-sharing Session of 6.1 & 13.3 & 13.5
Fri. Sep 22, 2023 9:00 AM - 12:15 PM JST
Fri. Sep 22, 2023 12:00 AM - 3:15 AM UTC
Fri. Sep 22, 2023 12:00 AM - 3:15 AM UTC
A201 (KJ Hall)
Hiroyuki Ota(AIST), Takao Shimizu(NIMS)
[22a-A201-1]Orientation control of Y-doped HfO2 thin films using lattice matching
〇(M2)Yoshiki Maekawa1, Koji Hirai1, Kazuki Okamoto1, Takao Shimizu2, Hiroshi Funakubo1 (1.Tokyo Tech., 2.NIMS)
[22a-A201-2]Thickness and composition dependence of electrical property in HfO2 -CeO2 film
Koji Hirai1, 〇Kazuki Okamoto1, Takahisa Shiraishi2,1, Wakiko Yamaoka3, Risako Tsurumaru3, Yukari Inoue3, Hiroshi Funakubo1 (1.Tokyo Tech., 2.Kumamoto Univ., 3.TDK Corp.)
[22a-A201-3]Evaluation of ferroelectricity for Hf0.5Zr0.5O2 thin films on Ga2O3 substrate
〇Keigo Naito1, Koichi Yamaguchi2, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metro. Univ., 2.Osaka Pref. Univ.)
[22a-A201-4]Non-heating process for (Hf,Zr)O2-based ferroelectric thin film transistor fabrication
〇(M1)Takeshi Asuka1, Hironori Fujisawa1, Seiji Nakashima1 (1.Univ. Hyogo)
[22a-A201-5]Electronic structure of the breakdown area in a HfO2-based ferroelectric film: Laser-based photoemission electron microscopy
〇Hirokazu Fujiwara1, Yuki Itoya2, Masaharu Kobayashi2,3, Cedric Bareille4,5, Shik Shin5,6, Toshiyuki Taniuchi4,5 (1.ISSP, 2.IIS, 3.d.lab, 4.GSFS, 5.MIRC, 6.Univ. of Tokyo)
[22a-A201-6]Analysis of Polarized Domain Behavior in Hf-Zr-O Ferroelectric Thin Films
〇Shinji Migita1, Shutaro Asanuma1, Yukinori Morita1, Hiroyuki Ota1 (1.AIST)
[22a-A201-7]Thickness dependence of EC in ferroelectric HfO2
〇Akira Toriumi1, Shinji Migita2 (1.Free Engineer, 2.AIST)
[22a-A201-8]Polarization reversal kinetics in ferroelectric HfO2
〇Akira Toriumi1, Shinji Migita2 (1.Free Engineer, 2.AIST)
[22a-A201-9]Influence of Electric Field during Holding Time on Imprint Characteristics in Hf0.5Zr0.5O2 MFM Capacitors
〇Zhenhong Liu1, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1.Tokyo Univ.)
[22a-A201-10]Disturb-free operatin of HfO2-FeFET by controlling the HfO2/SiO2 interfacial charges
〇Takamasa Hamai1, Kunifumi Suzuki1, Reika Ichihara1, Yoko Yoshimura1, Kiwamu Sakuma1, Kazuhiro Matsuo1, Shosuke Fujii1, Masumi Saitoh1 (1.Kioxia)
[22a-A201-11]Effect of Accumulated Read Operation on Polarization State in HZO-FeFET
〇Masaki Otomo1, Kasidit Toprasertpong1, Mitsuru Takenaka1, Takagi Shinichi1 (1.Univ. Tokyo)
[22a-A201-12]Impact of HZO Scaling in FeFET on the electrical characteristics
〇(D)ZUOCHENG CAI1, KASIDIT TOPRASERTPONG1, MITSURU TAKENAKA1, SHINICHI TAKAGI1 (1.The Univ. of Tokyo)