[22a-A302-1~9] FS.1 Focused Session "AI Electronics"

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[22a-A302-7] Impact of applying pulse to substrate for FeFET reservoir computing performance

〇Eishin Nako¹, Kasidit Toprasertpong¹, Ryosho Nakane¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:

reservoir computing,FeFET

We have demonstrated various approaches to improve the performance of ferroelectric-gate field-effect transistors (FeFETs) for reservoir computing. In this study, we demonstrate that by leveraging the characteristic of FeFETs being four-terminal devices, we can enhance the reservoir computing performance by simultaneously inputting different signals to the substrate terminals of FeFETs along with the gate input.