Session Details
[22a-A302-1~9]FS.1 Focused Session "AI Electronics"
Fri. Sep 22, 2023 9:00 AM - 11:30 AM JST
Fri. Sep 22, 2023 12:00 AM - 2:30 AM UTC
Fri. Sep 22, 2023 12:00 AM - 2:30 AM UTC
A302 (KJ Hall)
Toshikazu Hashimoto(NTT), Kensuke Ota(Sony Semiconductor Solutions)
[22a-A302-1]Electrode Area Dependence of Processing Capability in Ionic Liquid-Based Physical Reservoir Device: Effects of Solution Resistance and Ion Transport at Electrode Peripheral Region
Takuma Matsuo1,2, Masaharu Yonezawa1,2, Yuki Kubo1,2, 〇Hisashi SHIMA2, Yasuhisa Naitoh2, Hiroyuki Akinaga2, Toshiyuki Itoh3, Toshiki Nokami4, Masakazu Kobayashi5, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci., 2.AIST, 3.Toyota Physical and Chemical Research Institute, 4.Tottori Univ., 5.NAGASE & CO., LTD.)
[22a-A302-2]Simultaneous Improvement of Short-term Memory and Non-linear Conversion Characteristics in Ionic Liquid-based Physical Reservoir Device by Introducing Asymmetry of Electrode Structure
〇Masaharu Yonezawa1,2, Hisashi Shima2, Yuki Kubo1,2, Yasuhisa Naitoh2, Hiroyuki Akinaga2, Toshiyuki Itoh3, Toshiki Nokami4, Masakazu Kobayashi1,5, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci., 2.AIST, 3.Toyota Physical & Chemical Research Inst., 4.Tottori Univ., 5.NAGASE & CO., LTD.)
[22a-A302-3]Improvement of learning performance in ionic liquid-based physical reservoir device by thermal and electric pretreatment
〇Yuki Kubo1,2, Masaharu Yonezawa1,2, Hisashi Shima2, Yasuhisa Naitoh2, Hiroyuki Akinaga2, Toshiyuki Itoh3, Toshiki Nokami4, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci., 2.AIST, 3.Toyota Physical and Chemical Research Institute, 4.Tottori Univ.)
[22a-A302-4]Cooperative learning of mixed ionic liquid reservoir
〇Asahi Arai1, Zheng Yumeng1, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci.)
[22a-A302-5]Physical Reservoir Computing using Ionic Conduction by Electrochemical Reactions
〇(M1)Shunki Taniguchi1, Seiya Watanabe1, Hiroyuki S. Kato1, Megumi Akai-Kasaya1,2 (1.Osaka Univ., 2.Hokkaido Univ.)
[22a-A302-6]Reservoir computing with conductive polymer wire.
〇(M1)Ryosuke Nakajima1, Seiya Watanabe1, Hiroyuki S. Kato1, Megumi Akai1,2 (1.Osaka Univ., 2.Hokkaido Univ.)
[22a-A302-7]Impact of applying pulse to substrate for FeFET reservoir computing performance
〇Eishin Nako1, Kasidit Toprasertpong1, Ryosho Nakane1, Mitsuru Takenaka1, Shinichi Takagi1 (1.Univ. Tokyo)
[22a-A302-8]Enhancement of reservoir computing performance by a combination of n- and p-channel FeFETs
〇Rikuo Suzuki1, Kasidit Toprasertpong1, Eishin Nako1, Ryosyo Nakane1, Mitsuru Takenaka1, Shinichi Takagi1 (1.Univ Tokyo.)
[22a-A302-9]Mechanism of leaky-integration in oxide field-effect transistors
〇Hisashi Inoue1, Ai Kitoh1, Isao Inoue1 (1.AIST)