[22a-A304-1~10] 6.4 Thin films and New materials

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[22a-A304-10] Evaluation of MnTe Thin Film for Optical Communication Switch

〇Masashi Kuwahara¹, Mihyeon Kim², Shunsuke Mori², Yi Shuang², Yuji Sutou², Hitoshi Kawashima¹ (1.AIST, 2.Tohoku Univ.)

Keywords:

MnTe,optical communication switching device,crystal structure change

Using Ge₂Sb₂Te₅(GST), we fabricated a switching device for optical communication and succeeded in verifying its operation. However, it has the drawback of being unsuitable for optical path switching of 2x2 or more because it absorbs a large amount of GST in the communication wavelength band of 1.55 μm. Recently, MnTe has been reported by Professor Sudo et al. of Tohoku Univ. and is expected to have very low absorption in the optical communication band. In order to apply MnTe to switch devicies, we have started research on film formation and optical properties.