Presentation Information
[22a-A501-2]Oxidation mechanisms proceeding at local/entire area of hafnium absorbed Si(111)
〇Takuhiro Kakiuchi1, Yasutaka Tsuda2, Akitaka Yoshigo2 (1.Grad. Sch. Sci. Eng., Ehime Univ., 2.Japan Atomic Energy Agency)
Keywords:
Semiconductor,Hafnium dioxide,X-rya photoelectron spectroscopy
We investigated early oxidation mechanisms on Hf adsorbed Si(111)-7x7 surface by synchrotron radiation X-ray photoelectron spectroscopy combined with the supersonic oxygen molecular beam technique. In low Hf coverage of 0.5 ML, the oxidation was progressed around local Hf adsorbed area, where Hf atoms favorably adsorbed on Si rest-atoms or Si adatoms. In Hf coverage of 2.0 ML, on the other hand, the oxidation was entirely progressed on metallic Hf covered Si(111) surface due to the valence band lowering.