[22a-B101-1~10] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)English Presentation

[22a-B101-2] Hybrid quantum-well InGaN red LEDs studied by correlative micro-photoluminescence spectroscopy

〇(D)Zhaozong Zhang¹, Ryota Ishii¹, Kanako Shojiki¹, Mitsuru Funato¹, Daisuke Iida², Kazuhiro Ohkawa², Yoichi Kawakami¹ (1.Kyoto Univ., 2.KAUST)

Keywords:

Microphotoluminescence,Hybrid quantum-well,InGaN red LEDs

Recently, various approaches have been proposed to improve the crystal quality of high In content InGaN quantum wells (QWs). For example, Iida et al. fabricated 621 nm red LEDs with an EQE of 4.3%, by employing a strain-compensating barrier layer, hybrid QW structure, and thick GaN template. Nevertheless, the microscopic optical properties, such as the physics of dark spots observed in the red emission image, are not fully resolved. In this study, we performed micro-photoluminescence spectroscopy for an InGaN-based red LED with a hybrid QW structure and experimentally investigate the non-radiative recombination processes. The correlation between the blue SQW and the red SQW will be reported.