The 84th JSAP Autumn Meeting 2023
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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[22a-B101-1~10]15.4 III-V-group nitride crystals

Fri. Sep 22, 2023 9:00 AM - 11:45 AM JST
Fri. Sep 22, 2023 12:00 AM - 2:45 AM UTC
B101 (Civic Auditorium)
Tomoyuki Tanikawa(Osaka Univ.), Kenjiro Uesugi(Mie Univ.)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[22a-B101-1]Effect of nitrogen plasma treatment on sapphire substrate surface on InN growth

〇Takahiro Gotow1, Naoto Kumagai1, Tetsuji Shimizu1, Hisashi Yamada1, Toshihide Ide1, Tatsuro Maeda1 (1.AIST)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)English Presentation

[22a-B101-2]Hybrid quantum-well InGaN red LEDs studied by correlative micro-photoluminescence spectroscopy

〇(D)Zhaozong Zhang1, Ryota Ishii1, Kanako Shojiki1, Mitsuru Funato1, Daisuke Iida2, Kazuhiro Ohkawa2, Yoichi Kawakami1 (1.Kyoto Univ., 2.KAUST)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[22a-B101-3]Vapor phase mass transport of InGaN by Face-to-face annealing with ammonia

〇Atsuto Nakata1, Ayano Sasaki1, Satoshi Kurai1, Okada Narihito1, Yoichi Yamada1 (1.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B101-4]GaN growth on Al-pretreated sapphire substrates without low-temperature buffer layers

〇Kodai Takemura1, Takato Fukui1, Yoshinobu Matsuda1, Mitsuru Funato1, Yoichi Kawakami1 (1.Kyoto Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B101-5]Investigation of barriers in green GaInN quantum wells on GaN substrates

〇Kotaro Nozu1, Motoki Nakano1, Ruka Watanabe1, Mitsuki Yanagawa1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Kentaro Nonaka2, Yoshitaka Kuraoka2, Takahumi Yoshino2 (1.Meijo Univ., 2.NGK INSULATORS)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B101-6]High-quality AlInN under layer using hydrogen cleaning

〇Taichi Nishikawa1, Kana Shibata1, Tsuyoshi Nagasawa1, Kenta Kobayashi1, Ruka Watanabe1, Mitsuki Yanagawa1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1.Meijo Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B101-7]Influence of Growth Interruption during AlGaN Quantum Well Growth

〇(M1)Ryunosuke Oka1, Tomoaki Kachi1, Hayata Takahata1, Hisanori Ishiguro1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Koji Okuno2, Yoshiki Saito2 (1.Meijo Univ., 2.Toyoda Gosei Co.,Ltd.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[22a-B101-8]Growth of N-polar AlN epilayer by ammonia free high temperature MOCVD

〇Xu-Qiang Shen1, Kazutoshi Kojima1 (1.AIST)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B101-9]Crystal growth mechanism of N-polar GaN/AlGaN/AlN structures

〇Minagi Miyamoto1, Hanasaku Koki1, Kowaki Taketo1, Inahara Daisuke1, Zazuli Aina Hiyama1, Fuji Kai1, Kimoto Taisei1, Ninoki Ryosuke1, Kurai Satoshi1, Okada Narihito1, Yamada Yoichi1 (1.Grad.School of Sci. & Tech. for Innovation, Yamaguchi Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B101-10]Effect of N polar AlN underlayer crystallinity on electrical properties of GaN/AlN structure

〇Taketo Kowaki1, Koki hanasaku1, Minagi Miyamoto1, Daisuke Inahara1, Aina Hiyama Zazuli1, Kai Fuji1, Taisei Kimoto1, Ryosuke Ninoki1, Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1 (1.Grad.School of Sci.& Tech. for Inovation Yamaguchi Univ.)
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