[22a-B205-1~11] 12.1 Fabrications and Structure Controls

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[22a-B205-1] Solution process thin film growth of TIPS-pentacene on Hf_0.5Zr_0.5O₂ gate insulator

Yuta Kawano^1,2, Daiji Kitamura¹, Kazuto Koike^1,2, Shingo Maruyama³, 〇Nobuya Hiroshiba^1,2 (1.Osaka Inst. of Tech., 2.OIT, NMRC, 3.Tohoku Univ.)

Keywords:

Ferroelectric gate insulator,TIPS-pentacene

We demonstrated solution process thin film growth of TIPS-pentacene on Hr0.5Zr0.5O2 gate insulator. Hr0.5Zr0.5O2 gate insulator thin film was fabricated on doped-Si substrate by a chemical solution deposition method. XRD analysis shows that the orthorombic phase of Hr0.5Zr0.5O2, which ferroelectric phase, is grown on Si surface. TIPS-pentacene thin films were fabricated on Hr0.5Zr0.5O2 surfaces by spin-coating method. The diffraction peak of TIPS pentacene derived from crystallization was confirmed under heat treatment conditions of 150 ° C. for 15 minutes. In addition, changes in the surface morphologies due to crystallization were confirmed by AFM measurements. The detailed discussion will be given on the presentation.