[22a-B205-1~11] 12.1 Fabrications and Structure Controls

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[22a-B205-5] Fabrication of all-printed inverted QD-LEDs and improvement of device performance by the optimization of multilayered structures

〇Taisuke Sekino¹, Eiji Itoh¹ (1.Shinshu Univ.)

Keywords:

semiconductor quantum dots,inverted QD-LED,Meniscus coat ing

In this study, we fabricated all-printed inverted QD-LEDs and improve device performance by the optimization of multilayered structures.We also controlled thickness of QD layere by using meniscus coating and transfer printing.EQE of the device(QD: 20 nm) by inserting F8BT as eletron-tranporting layer was 2.13%, which is equivalent or better than the performance of the device (ZnO/p-meO-Phen/QD:PMMA, EQE:1.96%)