[22a-C401-1~9] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[22a-C401-7] Film-thickness and Annealing-temperature Dependence of Optical Absorption and Photoluminescence Properties of SiC added SiO_x Thin Films

〇(M1)Sota Iwasaki¹, Takamasa Nakamura¹, Katsumata Hiroshi¹ (1.Meiji Univ.)

Keywords:

Silicon Carbide,Quantum Dot,Nanocrystal