[22a-C402-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[22a-C402-1] Lasing characteristics of GaInAsP LD on directly bonded InP/Si substrates with gas out channel

〇Liang Zhao¹, Gandhi Kallarasan Periyanayagam¹, Zhang Junyu¹, Ryosuke Yada¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:

Hydrophilic Direct Bonding,Silicon photonics,InP