The 84th JSAP Autumn Meeting 2023
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Session Details

Oral presentation3 Optics and Photonics : 3.12 Semiconductor optical devices (formerly 3.13)

[22a-C402-1~10]3.12 Semiconductor optical devices (formerly 3.13)

Fri. Sep 22, 2023 9:00 AM - 11:45 AM JST
Fri. Sep 22, 2023 12:00 AM - 2:45 AM UTC
C402 (Int'l Ctr.)
Kazuhiko Shimomura(Sophia Univ.), Nobuhide Yokota(Tohoku Univ.)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[22a-C402-1]Lasing characteristics of GaInAsP LD on directly bonded InP/Si substrates with gas out channel

〇Liang Zhao1, Gandhi Kallarasan Periyanayagam1, Zhang Junyu1, Ryosuke Yada1, Kazuhiko Shimomura1 (1.Sophia Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[22a-C402-2]Investigation of low-threshold current structure for SCH-MQW laser diode on InP/Si substrate including scattering loss of voids

〇Mizuki Kuroi1, Zhao Liang1, Shimomura Kazuhiko1 (1.Sophia Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[22a-C402-3]Effect of surface roughness on the wave chaotic modes

〇Takehiro Fukushima1 (1.Okayama Pref. Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[22a-C402-4]High speed QKD with Passive Quench Photon Detectors

〇(M1)Toshitsugu Kato1, Akihisa Tomita2, Atsushi Okamoto2, Masatoshi Kanazawa2 (1.IST-Hokkaido Univ., 2.Fac. of IST-Hokkaido Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-C402-5]Study on Heterogeneous Integration of Hf0.5Zr0.5O2 Nonvolatile Phase Shifters on SiNx Optical Circuit

〇(M1)Satoshi Fujiya1, Daiki Yamashita1, Hideo Isshiki1 (1.Univ. Electro-Communications)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[22a-C402-6]Investigation of agile transfer printing of semiconductor films with polyvinyl chloride

〇Takumi Sato1, Soma Akahoshi1, Akinari Fujita1, Satoshi Iwamoto2, Yasutomo Ota1 (1.Keio Univ., 2.RCAST, the Univ. of Tokyo)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[22a-C402-7]Flexible organic photoplethysmography sensors based on large-area organic photodiodes for long-term pulse wave monitoring

〇(M2)SHUYANG GUO1, Sunghoon Lee1, Tomoyuki Yokota1, Takao Someya1 (1.The Univ. of Tokyo)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[22a-C402-8]Enhancement effect of light sensitivity in SOI photodiode by diffraction grating composed of two-dimensional metallic hole array

〇Ryuji Yamamoto1, Hiroaki Satoh1,2 (1.GSIST, Shizuoka Univ., 2.RIE, Shizuoka Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)English Presentation

[22a-C402-9]Enhanced internal quantum yield for dysprosium doped novel niobate based phosphors

〇(DC)Kanishk Poria1, Nisha Deopa2, Jangvir Singh Shahi1 (1.Panjab Univ., 2.Ch. Ranbir Singh Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)English Presentation

[22a-C402-10]CHARACTERISTICS OF p-NiO/ n-CdO: ZnO HETEROJUNCTIONS AND ROLE OF p-CuO HOLE TRANSPORT LAYER

〇SAHEER CHEEMADAN1, Santhosh Kumar2 (1.MAMO College, Manassery, INDIA, 2.NIT TRICHY, INDIA)
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