[22p-A307-1~17] 6.6 Probe Microscopy

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[22p-A307-2] Application of SNDM potentiometry to compensation for influence of surface trapped charges on semiconductor samples

〇Yuji Miyato¹, Hiroki Nozaki², Norihito Mayama² (1.Ryukoku Univ., 2.Toshiba Nanoanalysis)

Keywords:

SNDM,potentiometry,semiconductor evaluation

Scanning Nonlinear Dielectric Microscopy (SNDM) is one of the high-resolution techniques to visualize the carrier density distributions on semiconductor samples. However, we observed the charges were accidentally trapped on the sample surface during SNDM scan. The charges possibly degrade the quantitativity and reproducibility of SNDM results when the DC bias voltages condition is fixed. In this study, we have applied the SNDM potentiometry to suppress the influence of the trapped charges.