[22p-A307-1~17] 6.6 Probe Microscopy

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[22p-A307-5] Effect of Minority Carrier Injection on Hydrogen-terminated Si surfaces Measured by Two-probe Scanning Tunneling Microscopy

〇Jo Onoda¹, Lucian Livadaru², Robert Wolkow³, Jason Pitters⁴ (1.UTEF, 2.Quantum Silicon Inc, 3.Univ. Alberta, 4.NRCC)

Keywords:

scanning tunneling microscopy,semiconductor,minority carrier injection

Atomic-scale devices based on dangling bonds (DBs) on hydrogen-terminated Si surfaces have attracted much attention. In this study, the effect of minority carrier (hole) injection into hydrogen-terminated Si(100) surface was investigated using a two-probe scanning tunneling microscope (STM). The results of STM observation and I-V measurements with one probe while injecting holes with the other probe show that the injected holes move toward the probe and reduce the band bending, and also change the charge state of the DB.