[22p-A501-1~16] 6.5 Surface Physics, Vacuum

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22p-A501-3] Growth and Electronic Structure of Few-Atomic-Layer In Grown on Si(111)

〇Tomoka Murata¹, Kenta Kuroishi¹, Keisuke Yukawa¹, Shinichiro Hatta¹, Hiroshi Okuyama¹, Tetsuya Aruga¹ (1.Kyoto Univ.)

Keywords:

ultrathin metal films,ARPES,LEED

We have studied growth and electronic structure of few-atomic-layer In grown on Si(111) by using low-energy electron diffraction, scanning tunneling microscopy and angle-resolved photoelectron spectroscopy. By In deposition on the top of 2-atomic-layer In at 100 K, we found by STM and LEED observations that two In/Si(111)-√3×√3-R30° superstructures with different thickness grow layer-by-layer. 2D Fermi surfaces of both √3×√3 structures consist of multiple warped hexagons which are largely different from the free-electron-like circular Fermi surface on the 2-atomic-layer In.