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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[22p-B101-12]Dependence of internal quantum efficiency on the number of quantum wells in AlGaN quantum well structures with low-dislocation AlN template

〇Kousuke Inai¹, Oshimura Ryota¹, Kunio Himeno¹, Megumi Fujii¹, Yuta Onishi¹, Satoshi Kurai¹, Narihito Okada¹, Uesugi Kenjiro^2,3, Hideto Miyake⁴, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.ORIP, Mie Univ., 3.Grad. School of RIS, Mie Univ., 4.Grad. School of Eng, Mie Univ.)

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Keywords:

AlGaN,internal quantum efficiency,quantum well structures

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