Session Details
[22p-B101-1~16]15.4 III-V-group nitride crystals
Fri. Sep 22, 2023 1:30 PM - 6:00 PM JST
Fri. Sep 22, 2023 4:30 AM - 9:00 AM UTC
Fri. Sep 22, 2023 4:30 AM - 9:00 AM UTC
B101 (Civic Auditorium)
Atsushi Yamaguchi(Kanazawa Inst. of Tech.), Ryota Ishii(Kyoto Univ.), Kohei SHIMA(Tohoku Univ.)
[22p-B101-1]Non-destructive and non-contact measurements of GaN/SAM templates using THz-TDSE
〇Takashi Fujii1,2,3, Watanabe Hayato1, Wang Dingding1, Fukuda Tsuguo2, Iwamoto Toshiyuki3, Deura Momoko4, Araki Tsutomu1 (1.Col. of Sci. & Eng. Ritsumeikan Univ., 2.Fukuda Cryst.Lab., 3.NIPPO PRECISION Co.Ltd., 4.R-GIRO Ritsumeikan Univ.)
[22p-B101-2]Evaluation of Electrical Properties of Mg Ion-implanted GaN Single Crystals using THz-TDSE(II)
〇Dingding Wang1, Hayato Watanabe1, Takashi Fujii1,3, Momoko Deura2, Toshiyuki Iwamoto3, Atsushi Suyama4, Hitoshi Kawanowa4, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.PNP, 4.Ion Technology Center Co., Ltd)
[22p-B101-3]Characterization of Optical Properties of ScAlN/GaN by Spectroscopic Ellipsometry
〇Takuya Maeda1, Yusuke Wakamoto1, Shota Kaneki2, Hajime Fujikura2, Atsushi Kobayashi3 (1.UTokyo, 2.Sumitomo Chemical Co. Inc., 3.Tokyo Univ. of Sci.)
[22p-B101-4]Effect of In composition gradient on phonon transport in GaInN/GaN-hetero structure
〇Tatsuya Asaji1, Thee Ei Khaing Shwe1, Daisuke Iida2, Mohammed A.Najimi2, Kazuhiro Ohkawa2, Bei Ma1, Yoshihiro Ishitani1 (1.Chiba Univ., 2.King Abdullah Univ.)
[22p-B101-5]Influence of phonon process on 2-dimensional exciton in GaN/AlN quantum well analyzed by phononic–excitonic–radiative model
〇(D)Masaya Chizaki1, Yoshihiro Ishitani1 (1.Chiba Univ.)
[22p-B101-6]Evaluation of Anisotropic Strain in C-plane GaN using Raman Spectroscopy (1)
〇Kazuma Takeuchi1, Hiroyuki Ogura1, Noriyuki Hasuike2, Takeshi Kamikawa1 (1.Kyocera Corp., 2.Kyoto Institute of Technology)
[22p-B101-7]Evaluation of Anisotropic Strain in C-plane GaN using Raman Spectroscopy (2)
〇Kazuma Takeuchi1, Hiroyuki Ogura1, Noriyuki Hasuike2, Takeshi Kamikawa1 (1.Kyocera Corp., 2.Kyoto Institute of Technology)
[22p-B101-8]Investigation of in-plane stress distribution in ELO GaN layer by micro-Raman Spectroscopy
〇Hiroyuki Ogura1, Kazuma Takeuchi1, Takeshi Kamikawa1 (1.Kyocera Corp.)
[22p-B101-9]Analysis of the in-gap energy states in GaN- based tunnel junctions by using photothermal deflection spectroscopy
〇Hayato Ichikawa1, Hinata Uda1, Kouki Noda1, Daichi Imai1, Tetsuya Takeuchi1, Takao Miyajima1 (1.Meijo Univ.)
[22p-B101-10]Evaluation of C, O ion implanted GaN films by photothermal deflection spectroscopy
〇(M1)Tasuke Saito1,2, Arai Yuuki1,2, Sakaguchi Isao1, Onuma Takeyoshi2, Honda Tohru2, Sumiya Masatomo1 (1.NIMS, 2.Kogakuin Univ.)
[22p-B101-11]Characterization of GaN crystals with low carbon concentration grown by halide vapor phase epitaxy based on photoluminescence spectroscopy
〇Koshi Sano1, Hajime Fujikura2, Taichiro Konno2, Shota Kaneki2, Shuhei Ichikawa1, Kazunobu Kojima1 (1.Osaka Univ., 2.Sumitomo Chemical Co. Ltd.)
[22p-B101-12]Dependence of internal quantum efficiency on the number of quantum wells in AlGaN quantum well structures with low-dislocation AlN template
〇Kousuke Inai1, Oshimura Ryota1, Kunio Himeno1, Megumi Fujii1, Yuta Onishi1, Satoshi Kurai1, Narihito Okada1, Uesugi Kenjiro2,3, Hideto Miyake4, Yoichi Yamada1 (1.Yamaguchi Univ., 2.ORIP, Mie Univ., 3.Grad. School of RIS, Mie Univ., 4.Grad. School of Eng, Mie Univ.)
[22p-B101-13]Current dependence of line profiles of CL intensity in UV-C band AlGaN multiple quantum well structures
〇Yuta Onisi1, Yamaguchi Ryuhei1, Takesue Tosihiro1, Kurai Satosi1, Okada Narihito1, Uesugi Kenjiro2,3, Miyake Hideto4, Yamada Yoichi1 (1.Yamaguchi Univ., 2.ORIP, Mie Univ., 3.Grad. School of RIS, Mie Univ., 4.Grad. School of Eng, Mie Univ.)
[22p-B101-14]Temperature dependence of efficiency curve in AlGaN-based multiple quantum wells with emission wavelengths from 220 to 260 nm
Kosuke Inai1, Kunio Himeno1, Kaichi Tani1, Hiromasa Hayashi1, 〇Hideaki Murotani2, Satoshi Kurai1, Narihito Okada1, Kenjiro Uesugi3,4, Hideto Miyake5, Yoichi Yamada1 (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.ORIP, Mie Univ., 4.Grad. Sch. of RIS, Mie Univ., 5.Mie Univ.)
[22p-B101-15]On the substitutinal Mg acceptor binding energy of AlN: experimental aspects
〇Ryota Ishii1, Akira Yoshikawa2, Mitsuru Funato1, Yoichi Kawakami1 (1.Kyoto Univ., 2.Nagoya Univ.)
[22p-B101-16]On the substitutional Mg acceptor binding energy of AlN: thoretical aspects
〇Ryota Ishii1, Akira Yoshikawa2, Mitsuru Funato1, Yoichi Kawakami1 (1.Kyoto Univ., 2.Nagoya Univ.)