Presentation Information

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22p-C601-18]Interfacial Treatment of CuSCN Hole Transport Layer for Improvement of Perovskite Solar Cell Performance

〇Keito Hisatsune¹, Shiro Uchida¹, Takurou Murakami², Atsushi Kogo² (1.Chiba Inst., 2.AIST)

Keywords:

perovskite

Perovskite solar cells (PSCs) are attracting attention as next-generation solar cells because they can be easily fabricated by a solution-coating method and exhibit high power conversion efficiency (world's highest efficiency: 26.0%), which is close to that of Si solar cells (world's highest efficiency: 26.8%) that are widely used. Recently, CuSCN, which is an inexpensive, highly durable, and solution-coatable semiconductor, has been investigated as a hole transport layer to improve the durability of PSCs[1], but its power conversion efficiency is lower than that of conventional spiro-OMeTAD hole transport layers. In this study, CuSCN/perovskite interface treatment was performed to suppress recombination and increase conductivity to improve CuSCN-based PSC performance.

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