[23a-A202-1~11] 17.3 Layered materials

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[23a-A202-10] Atomic Layer Deposition on Transition Metal Dichalcogenides with a Native Oxide Layer

〇(M1)Shohi Tahara¹, Keiji Ueno², Ryo Nouchi^1,3 (1.Osaka Metro. Univ., 2.Saitama Univ., 3.JST-PRESTO)

Keywords:

transition metal dichalcogenide,atomic layer deposition,native oxide

Surface oxidation treatment is necessary for uniform deposition of ultrathin insulating films by atomic layer deposition (ALD) on MoS₂, a representative transition metal dichalcogenide. The oxidation treatment introduces OH groups on the surface, improving the adsorption energy of the ALD precursors. In this presentation, we report that in the case of TaS₂, which possesses a native oxide layer, the uniform deposition of ALD-grown ultrathin insulating films can be achieved without surface oxidation treatment. This finding indicates that 2D materials with a surface native oxide layer are compatible with ALD processes without worrying about the damage caused by the oxidation treatment.