[23a-A202-1~11] 17.3 Layered materials

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[23a-A202-5] Detection of Γ-valley states in the valence band of WSe₂/MoS₂ hetero-bilayer via resonant tunneling

〇Seiya Kawasaki¹, Kei Kinoshita¹, Momoko Onodera¹, Rai Moriya¹, Yijin Zhang¹, Satoru Masubuchi¹, Kenji Watanabe², Takashi Taniguchi², Takao Sasagawa³, Tomoki Machida¹ (1.IIS Univ. Tokyo, 2.NIMS, 3.MSL Tokyo Tech.)

Keywords:

hetero-bilayer,TMD,resonant tunneling

We investigated the Γ-valley states in the valence band of a WSe₂/MoS₂ hetero-bilayer (HBL). We fabricated van der Waals tunnel junctions of HBL/few-layer h-BN/p⁺-MoS₂ and measured tunneling current from p⁺-MoS₂ to HBL. We observed peak structures in current-voltage curves, which corresponds to resonant tunneling into the Γ-valley states of HBL. These peaks emerged at different voltage position from that of monolayer (ML) WSe₂, suggesting that there is a difference between the band structures of HBL and ML-WSe₂.