[23a-A202-1~11] 17.3 Layered materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-A202-7] Gate-induced moiré deformation in bilayer WS₂

〇Mina Maruyama¹, Susumu Okada¹ (1.Univ. of Tsukuba)

Keywords:

transition metal dichalcogenide,Geometric structure,moire

We investigated the geometric structure of WS₂ and their thin films under the electric field and excess carriers using the density functional theory combined with the effective screening medium method. Our calculation demonstrated that W-S spacing increase with increasing the hole doping concentration. Furthermore, we also found the field-induced polarization and the doped carrier distribution are asymmetric with respect to the layers, so that the field-induced moiré reconstruction is expected to occur in the thin films.