[23a-A303-1~11] 13.3 Insulator technology

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[23a-A303-5] The study of nitrogen vacancy based hBN ReRAM using reactive sputtering

〇(M2C)Chau Do^1,2, Om Kumar Prasad^1,2, Mai Thu Thi¹, Chin Han Chung^1,2 (1.National Yang Ming Chiao Tung Univ., 2.Radhard lab)

Keywords:

semiconductor,Resistive RAM,hexagonal boron nitride

This study fabricated and investigated nitrogen vacancy based ReRAM using hexagonal Boron Nitride (hBN) as the switching material with the device structure Pt/hBN/TiN. The hBN was prepared using reactive RF sputtering with 3 thickness values of 5 nm, 8 nm and 10 nm. All three samples are at high resistivity state (HRS) in their pristine state, therefore all samples require a forming process to switch to low resistivity state (LRS). All three samples have bipolar switching I-V curves with similar Set and Reset voltages. However in the endurance test only the 10 nm device was able to switch for at least 100 cycles. In addition, we also investigated the effect of a Ti capping layer inserted between the hBN layer and top electrode. The inserted Ti layer improved the endurance of the 8 nm samples, increasing the endurance to at least 100 cycles and widened the On/Off ratio of the 5 nm, demonstrating the effect of a Ti capping layer in nitrogen vacancy ReRAM.