The 84th JSAP Autumn Meeting 2023
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Oral presentation13 Semiconductors : 13.3 Insulator technology

[23a-A303-1~11]13.3 Insulator technology

Sat. Sep 23, 2023 9:00 AM - 12:30 PM JST
Sat. Sep 23, 2023 12:00 AM - 3:30 AM UTC
A303 (KJ Hall)
Yuuichiro Mitani(Tokyo City University), noriyuki taoka(愛工大)
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9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[23a-A303-1][INVITED] Statistical Measurement of Electrical Characteristics of Functional Thin Films Using Impedance Measurement Platform Technology

〇Koga Saito1, Tatsuhiko Suzuki1, Hidemi Mitsuda1, Takezo Mawaki1,2, Tomoyuki Suwa2, Akinobu Teramoto2,3, Shigetoshi Sugawa2, Rihito Kuroda1,2 (1.Grad. Sch. Eng. Tohoku Univ., 2.NICHe Tohoku Univ., 3.Res. Inst. for Nanodevices Hiroshima Univ.)
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9:30 AM - 10:00 AM JST(12:30 AM - 1:00 AM UTC)

[23a-A303-2][INVITED] Statistical Analysis of Random Telegraph Noise Dependence on MOS Transistor Shapes and Drain-to-Source Voltage

〇takezo mawaki1,2, rihito kuroda1,2 (1.Grad. Sch. Eng. Tohoku Univ., 2.NICHe Tohoku Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-A303-3]Statistical Measurement of Trap Characteristics of High Capacitance Density Trench Capacitor Using Current Measurement Platform

〇(M2)Tatsuhiko Suzuki1, Koga Saito1, Hidemi Mitsuda1, Takezo Mawaki1,2, Shigetoshi Sugawa2, Rihito Kuroda1,2 (1.Tohoku Univ., 2.NICHe Tohoku Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[23a-A303-4]Statistical Measurement of HfOx Film Resistance Change Using Resistance Measurement Platform

〇(M2)Hidemi Mitsuda1, Tatsuhiko Suzuki1, Koga Saito1, Takezo Mawaki1,2, Shigetoshi Sugawa2, Rihito Kuroda1,2 (1.Tohoku Univ., 2.NICHe Tohoku Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[23a-A303-5]The study of nitrogen vacancy based hBN ReRAM using reactive sputtering

〇(M2C)Chau Do1,2, Om Kumar Prasad1,2, Mai Thu Thi1, Chin Han Chung1,2 (1.National Yang Ming Chiao Tung Univ., 2.Radhard lab)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[23a-A303-6]Phonon analysis of SiO2 with different atomic densities using ultra-high energy resolution STEM-EELS

〇Takanori Asano1, Manabu Tezura1, Masumi Saitoh1, Hiroki Tanaka1 (1.Kioxia Corp.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-A303-7]Comprehensive Analysis of Hole Trapping in a SiN Film with a Wide Range of Time Constants

〇Harumi Seki1, Reika Ichihara1, Yasushi Nakasaki1, Masumi Saitoh1, Masamichi Suzuki1 (1.Kioxia)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[23a-A303-8]Charge trapping characteristics of magnesium-doped silicon nitride films

〇Daiki Morohoshi1, Kiyoteru Kobayashi1 (1.Grad. Sch. Eng.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[23a-A303-9]Thermal annealing effect on paramagnetic defects in silicon nitride films formed by a low-pressure chemical vapor deposition method

〇Ryo Miyauchi1, Kenshi Kimoto2, Kunimitsu Maejima2, Kiyoteru Kobayashi1 (1.Tokai Univ., 2.ESCO, Ltd.)
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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[23a-A303-10]Effect of the Interfacial Oxide Film on Breakdown Occurrence in LPCVD SiN film (I)

〇HISATSUGU KURITA1, Masataka Nakamura1, Hayato Miyagawa2, Yoshiaki Kamigaki3 (1.ROHM Hamamatsu, 2.Kagawa Univ., 3.E&B Research Lab.)
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12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[23a-A303-11]Effect of the Interfacial Oxide Film on Breakdown Occurrence in LPCVD SiN film (II)

〇Hayato Miyagawa1, Kosuke Bunya1, Hisatsugu Kurita2, Masataka Nakamura2, Yoshiaki Kamigaki3 (1.Kagawa Univ., 2.ROHM Hamamatsu, 3.E&B Research Lab.)
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