Presentation Information
[23a-A305-11]High quality thin film growth of BaSnO3 perovskite films with hexagonal boron nitride seed layer
〇Hiroshi Takashima1, Yoshiyuki Inaguma2, Masayoshi Nagao1, Katsuhisa Murakami1 (1.AIST, 2.Gakushuin Univ.)
Keywords:
near-infrared luminescence,h-BN,BaSnO3 films
Recently, bulk BaSnO3 with near-infrared emission has been reported. We have focused on the application of near-infrared luminescence to wavelength conversion devices to improve the power generation efficiency of solar cells, and have successfully deposited BaSnO3 thin films on single-crystalline SrTiO3(001) substrates to obtain excellent crystallinity and luminescence properties. The use of synthetic quartz substrates is required to achieve transparency and large scale, but direct deposition of perovskite-type oxide films on synthetic quartz substrates, which are generally amorphous, does not provide excellent crystallinity and functionality. In this study, we report on our success in obtaining excellent crystalline thin films by depositing hexagonal boron nitride (h-BN) with a thickness of around 10 nm on a synthetic quartz substrate as a seed layer and BaSnO3 on top of the seed layer.