[23a-A307-1~9] 6.3 Oxide electronics

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[23a-A307-4] Metal insulator transition in quantum well of Sr_1-xLa_xVO₃

〇KEI S TAKAHASHI¹, Junta Iguchi², Yoshinori Tokura^1,2,3, Masashi Kawasaki^1,2 (1.RIKEN CEMS, 2.Univ. of Tokyo, 3.Tokyo College, Univ. of Tokyo)

Keywords:

Mott insulator,Metal insulator transition,Molecular beam epitaxy

We have reported that SrVO₃ quantum wells with a thickness of less than 3 unit cells (u.c.) become Mott insulators. In additon, these two-dimensional Mott insulators can be doped with electrons, resulting in a transition to a metallic-like phase. In this study, we investigate the phase diagrams of Sr_1-xLa_xVO₃ quantum wells with various film thicknesses (2 to 5 u.c.) and compare them with quantum wells on different substrates to study the effect of epitaxial strain.