[23a-A311-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[23a-A311-1] In-gap level evaluation of Sb-Te films by photothermal deflection spectroscopy

〇Tamihiro Gotoh¹, Wataru Sawata¹, Aoi Iida¹ (1.Gunma Univ.)

Keywords:

phase-change memory,chalcogenide semiconductor,photothermal deflection spectroscopy

In Ge₂Sb₂Te₅ films, which are a phase-change memory material, the in-gap levels due to defects and structural disorder still remain unclear. In this study, we measure the subgap absorption of Sb_0.34Te_0.66 films and compare it with that of Ge₂Sb₂Te₅ films to investigate the formation mechanism of the in-gap states.