[23a-A311-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[23a-A311-2] Optical and electrical properties of evaporated Sn-Se films

〇(M2)Aoi Iida¹, Shuto Tago¹, Tamihiro Gotoh¹ (1.Gunma Univ.)

Keywords:

chalcogenide semiconductor,phase-change memory,vacuum evaporation

Chalcogenide materials such as Ge-Sb-Te and Ge-Si-As-Te systems are used for memory and selector elements that constitute phase-change memory device. If these materials could be made into binary materials, it would be easier to control their composition, which would lead to improved reliability. In this context, we focused on Sn-Se compounds. Sn-Se thin films were prepared by vacuum deposition, and the changes in optical band gap and electrical resistance due to heat treatment were investigated. Based on the results, potential applications will be discussed.