[23a-A311-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-A311-7] One dimensional model of bipolar resistive switching in Ag-Ge-Te based CBRAM

〇Yifei Yin¹, Keito Tsukamoto¹, Hitoshi Hayashi¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

Keywords:

COMSOL Multiphysics,Electrodeposition multiphysics module,Ag-Ge-Te based

CBRAM, which switches resistance by growth and cutting of conductive filaments, is attracting attention not only as a next-generation non-volatile memory, but also as a device responsible for neuromorphic computing and reservoir computing. We have fabricated an Ag-Ge-Te based CBRAM that can transmit RF waves, and have reported changes in the characteristics of the CBRAM by RF input. The frequency dependence of RF waves suggests the importance of ion dynamics. In this study, we constructed a one-dimensional computational model including ion dynamics for the design and analysis of Ag-Ge-Te based CBRAM, and simulated the bipolar resistance switching.