Presentation Information
[23a-B101-5]Demonstration of monolithically stacked GaN:Eu- and InGaN quantum well-based multi-color micro-LEDs using tunnel junctions
〇Genki Tanaka1, Toshihiro Ishihara1, Shuhei Ichikawa1,2, Jun Tatebayashi1, Yasufumi Fujiwara1 (1.Grad, Osaka Univ., 2.UHVEM, Osaka Univ.)
Keywords:
tunnel junction,GaN:Eu,micro-LEDs
Micro-LEDs have attracted attention in recent years as a next-generation display technology.
In this study, multicolor stacked micro-LEDs of InGaN quantum well LEDs and GaN:Eu red LEDs were fabricated using tunnel junction contacts to realize a stacked micro-LED display. The use of tunnel junctions is also shown to be a useful method for micro-LED integration of multicolor stacked micro-LEDs of InGaN quantum well LEDs and GaN:Eu red LEDs.
In this study, multicolor stacked micro-LEDs of InGaN quantum well LEDs and GaN:Eu red LEDs were fabricated using tunnel junction contacts to realize a stacked micro-LED display. The use of tunnel junctions is also shown to be a useful method for micro-LED integration of multicolor stacked micro-LEDs of InGaN quantum well LEDs and GaN:Eu red LEDs.