[23a-B101-1~11] 15.4 III-V-group nitride crystals

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-B101-9] Optimization of Gate region of hollowed-structure MicroLED for transfer technology

〇(M2)Taiki Kitade¹, Atsushi Nishikawa², Alexander Loesing², Masaki Shirai³, Hiroki Kobayashi³, Hiroto Sekiguchi¹ (1.Toyohashi Tech, 2.ALLOS, 3.ULVAC)

Keywords:

MicroLED,transfer method,hollowed-structured

We have realized a bio-embeddable LED film by establishing a micro-LED hollow structure formation technique and a batch transfer technique using a thermal release sheet. When the LEDs are peeled off in a batch using a thermal release sheet, the gate part supporting the hollow structure is folded, but the cut surface of the gate area is not stable, resulting in a decrease in the effective area of the LED due to residual gate part or loss near the gate. In this study, we report on the minimization of the gate area of the hollow structure.