[23p-A306-3~4] 15.2 II-VI and related compounds

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[23p-A306-4] Fabrication and characterization of ZnCdSe/MgZnSeTe double heterostructures for II-VI compound semiconductor optical devices on InP substrates

〇Ryo Konuma¹, Kou Umeda¹, Zengyi Qian¹, Yuta Suzuki¹, Jianyi Zhang¹, Ichirou Nomura¹ (1.Sophia Univ.)

Keywords:

II-VI compound semiconductor

ZnCdSe/MgZnSeTe double heterostructures were fabricated by the MBE method and characterized for the development of II-VI compound semiconductor optical devices on InP substrates. Two types of samples were prepared with the growth temperature of the MgZnSeTe layer set at 280℃ and 300℃. Room-temperature PL measurements of the sample showed that the luminescence intensities from both the MgZnSeTe layer and the ZnCdSe layer of the sample grown at 300℃ were higher than that at 280℃. Excellent luminescence characteristics were obtained for the 300℃ sample.