[23p-A307-1~15] 6.3 Oxide electronics

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[23p-A307-1] Enhancement of Protonation Resistive Switching Property by Controlling SmNiO₃ Interface and Nanostructures

〇(M2)Keito Umesaki¹, Sumito Kayao², Daisetsu Toh², Genki Ohkatsu³, Wataru Yamaguchi³, Ryosuke Nitta³, Yutaka Majima³, Li Haobo¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.SANKEN Osaka Univ., 2.Grad. School of Eng. Osaka Univ., 3.MSL Tokyo Tech.)

Keywords:

transition metal oxides,protonation resistive switching