[23p-A307-1~15] 6.3 Oxide electronics | The 84th JSAP Autumn Meeting 2023

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Session Details

Oral presentation6 Thin Films and Surfaces : 6.3 Oxide electronics

[23p-A307-1~15]6.3 Oxide electronics

Sat. Sep 23, 2023 1:00 PM - 5:00 PM JST
Sat. Sep 23, 2023 4:00 AM - 8:00 AM UTC

A307 (KJ Hall)

Hisashi Shima(AIST), Sang-Gyu Koh(Murata Manufacturing Co., Ltd.)

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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[23p-A307-1]Enhancement of Protonation Resistive Switching Property by Controlling SmNiO₃ Interface and Nanostructures

〇(M2)Keito Umesaki¹, Sumito Kayao², Daisetsu Toh², Genki Ohkatsu³, Wataru Yamaguchi³, Ryosuke Nitta³, Yutaka Majima³, Li Haobo¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.SANKEN Osaka Univ., 2.Grad. School of Eng. Osaka Univ., 3.MSL Tokyo Tech.)

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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[23p-A307-2]Bias voltage induced - electrical conductivity at electrode interfaces of a rutile TiO₂ single crystal: two different mechanisms depending on temperature

〇Taku Suzuki¹, Yoshiyuki Yamashita¹, Isao Sakaguchi¹ (1.NIMS)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[23p-A307-3]Empowering Efficiency: Scaling Device Area for Ultra-low-power Dissipation in Protonic Synapses

〇SatyaPrakash Pati¹, Satoshi Hamasuna¹, Takeaki Yajima¹ (1.Kyushu Univ.)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[23p-A307-4]Preparation of transparent ReRAM using various multicomponent n-type oxide semiconductor thin films and study of resistance change mechanism

〇Kyosuke Kimura¹, Ishida Tatsuya¹, Toshihiro Miyata¹ (1.KIT)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-A307-5]Effect of the hBN flake boundaries on current induced resistive switching of VO₂/hBN

〇(M1)Yuki Tomita¹, Shu Nakaharai², Yutaka Wakayama², Kenji Watanabe², Takashi Taniguchi², Haobo Li¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.Osaka Univ., 2.NIMS)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[23p-A307-6]Off time dependence of conductance change behavior of HfO₂based ReRAM device with voltage pulses stimulation

〇Masakazu Tanaka¹, Shinji Okayasu¹, Chuanyang Huang¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Kansai Univ.)

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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[23p-A307-7]Study of selective growth of oxide thin films using bridge structured a-CaO layer

〇Ryosuke Kajitani¹, Seiya Taguchi¹, Takeshi Kawae¹ (1.College of Sci. and Eng., Kanazawa Univ.)

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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[23p-A307-8]Synthesis of titanium oxide nano-powders from titanium oxalates by homogeneous precipitation and hydrothermal methods: control of anatase/rutile phases

〇(M2)Shohei Kajiwara¹, Kiyoshi Itatani^1,2, Hideki Kuwahara¹, Takeshi Toyama², Taishi Yokoi³, Tetsuo Sasaki⁴, Haruhiko Kuroe¹ (1.Sophia Univ., 2.Nihon Univ., 3.Tokyo Medical and Dental Univ., 4.Shizuoka Univ.)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[23p-A307-9]Effect of annealing process on electronic structure of titanium dioxide nanoparticles

〇Kenta Nakadai¹, Koji Okudaira¹ (1.Chiba Univ.)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[23p-A307-10]Elemental doping into TiO₂ photocatalyst via liquid phase deposition for decomposing methane

〇Mitsuhiro Honda¹, Yusaku Yoshii¹, Nobuchika Okayama², Yo Ichikawa¹ (1.Nitech., 2.KMEW)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[23p-A307-11]Photocatalytic properties of TiO₂ sputter thin films with CeO₂ underlayer deposited at room temperature

〇Hitoshi Wako¹ (1.Dexerials)

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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[23p-A307-12]Electronic structure of nitrogen-doped zinc oxide prepared by sol-gel method

〇(M1)Shintaro Motohiro¹, Koji Okudaira¹ (1.Graduate School of Science and Engineering, Chiba Univ.)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[23p-A307-13]Preparation of Cu₂O thin film for thin film solar cells by r.f.magnetron sputtering method

〇Tatsuya Ishida¹, Kyosuke Kimura¹, Toshihiro Miyata¹ (1.KIT)

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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[23p-A307-14]Effects of Source Solution of Cu₂O Films on the Polyethylene Terephthalate Substrates Sythesized Using Spin-Spray Process

〇Takahiro Toru¹, Miyazaki Hisashi¹, Kitahara Koichi¹, Okamoto Yoichi¹ (1.NDA MSE)

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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[23p-A307-15]Photocatalytic Performance in Graphitic Carbon Nitride Improved by Ca(OH)₂ Doping

〇Mizuki Aoki¹, Yuhei Kurita¹, Naoki Otani¹ (1.Doshisha Univ.)

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Session Details

[23p-A307-1~15]6.3 Oxide electronics

[23p-A307-1]Enhancement of Protonation Resistive Switching Property by Controlling SmNiO3 Interface and Nanostructures

[23p-A307-2]Bias voltage induced - electrical conductivity at electrode interfaces of a rutile TiO2 single crystal: two different mechanisms depending on temperature

[23p-A307-3]Empowering Efficiency: Scaling Device Area for Ultra-low-power Dissipation in Protonic Synapses

[23p-A307-4]Preparation of transparent ReRAM using various multicomponent n-type oxide semiconductor thin films and study of resistance change mechanism

[23p-A307-5]Effect of the hBN flake boundaries on current induced resistive switching of VO2/hBN

[23p-A307-6]Off time dependence of conductance change behavior of HfO2 based ReRAM device with voltage pulses stimulation

[23p-A307-7]Study of selective growth of oxide thin films using bridge structured a-CaO layer

[23p-A307-8]Synthesis of titanium oxide nano-powders from titanium oxalates by homogeneous precipitation and hydrothermal methods: control of anatase/rutile phases

[23p-A307-9]Effect of annealing process on electronic structure of titanium dioxide nanoparticles

[23p-A307-10]Elemental doping into TiO2 photocatalyst via liquid phase deposition for decomposing methane

[23p-A307-11]Photocatalytic properties of TiO2 sputter thin films with CeO2 underlayer deposited at room temperature

[23p-A307-12]Electronic structure of nitrogen-doped zinc oxide prepared by sol-gel method

[23p-A307-13]Preparation of Cu2O thin film for thin film solar cells by r.f.magnetron sputtering method

[23p-A307-14]Effects of Source Solution of Cu2O Films on the Polyethylene Terephthalate Substrates Sythesized Using Spin-Spray Process

[23p-A307-15]Photocatalytic Performance in Graphitic Carbon Nitride Improved by Ca(OH)2 Doping

[23p-A307-1]Enhancement of Protonation Resistive Switching Property by Controlling SmNiO₃ Interface and Nanostructures

[23p-A307-2]Bias voltage induced - electrical conductivity at electrode interfaces of a rutile TiO₂ single crystal: two different mechanisms depending on temperature

[23p-A307-5]Effect of the hBN flake boundaries on current induced resistive switching of VO₂/hBN

[23p-A307-6]Off time dependence of conductance change behavior of HfO₂based ReRAM device with voltage pulses stimulation

[23p-A307-10]Elemental doping into TiO₂ photocatalyst via liquid phase deposition for decomposing methane

[23p-A307-11]Photocatalytic properties of TiO₂ sputter thin films with CeO₂ underlayer deposited at room temperature

[23p-A307-13]Preparation of Cu₂O thin film for thin film solar cells by r.f.magnetron sputtering method

[23p-A307-14]Effects of Source Solution of Cu₂O Films on the Polyethylene Terephthalate Substrates Sythesized Using Spin-Spray Process

[23p-A307-15]Photocatalytic Performance in Graphitic Carbon Nitride Improved by Ca(OH)₂ Doping