[16a-A21-1~8] 15.4 III-V-group nitride crystals

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-A21-7] Epitaxial Polarity Inversion Process from Ga-polar GaN to N-polar GaN toward Multiple Polarity Inverted Structure Fabrication

〇Kazuhisa Ikeda¹, Kanako Ueda¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ.)

Keywords:

semiconductor,nitride