The 85th JSAP Autumn Meeting 2024
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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[16a-A21-1~8]15.4 III-V-group nitride crystals

Mon. Sep 16, 2024 9:00 AM - 11:30 AM JST
Mon. Sep 16, 2024 12:00 AM - 2:30 AM UTC
A21 (TOKI MESSE 2F)
Narihito Okada(Yamaguchi Univ.), Kazuki Ohnishi(Mie University)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-A21-1]Analysis on the initial stage of RF-MBE growth of GaN on cleaved ScAlMgO4 substrates

〇Nobuaki Hagiwara1, Yasuhiro Yamada1, Taiki Kusayama1, Momoko Deura2, Takashi Fujii1, Tsutomu Araki1 (1.Col. of Sci. & Eng.,Ritsumeikan Univ., 2.R-GIRO,Ritsumeikan Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-A21-2]Analysis on the initial stage of RF-MBE growth of InGaN on ScAlMgO4 substrates

〇Yuta Kubo1, Yuanze Zhong1, Momoko Deura2, Takashi Fujii1, Tsutomu Araki1 (1.Col. of Sci. & Eng., Ritsumeikan Univ., 2.R-GIRO, Ritsumeikan Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-A21-3]Red LED with PEDOT/PSS hole transporting layer on ScAlMgO4 substrate

〇(M2)Yuma Kato1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Emi Matsuyama2, Atsushi Suzuki2, Ryusei Sakamto1, Ryotaro Ito1 (1.Meijo Univ., 2.E&E Evolution Ltd.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-A21-4]First-Principles Calculation of Polarity Inversion Boundary in GaN

〇Takahiro Kawamura1, Toru Akiyama1, Hideto Miyake1, Yoshihiro Kangawa2, Kazuhisa Ikeda3, Tomoyuki Tanikawa3 (1.Mie Univ., 2.RIAM, Kyushu Univ., 3.Osaka Univ.)
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10:15 AM - 10:45 AM JST(1:15 AM - 1:45 AM UTC)

[16a-A21-5][INVITED] Development of N-polar GaN for RF transistors

〇Isao Makabe1 (1.Sumitomo Electric)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-A21-6]Analysis of impurity incorporation into GaN using universal neural network potential

〇Shigeki Yoshida1, Isao Makabe1, Takuji Yamamura1, Kozo Makiyama1, Ken Nakata1 (1.Sumitomo Electric)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-A21-7]Epitaxial Polarity Inversion Process from Ga-polar GaN to N-polar GaN toward Multiple Polarity Inverted Structure Fabrication

〇Kazuhisa Ikeda1, Kanako Ueda1, Masahiro Uemukai1, Tomoyuki Tanikawa1, Ryuji Katayama1 (1.Osaka Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-A21-8]Study on AlN Surface Oxidation Process for Polarity-Inverted Stacking Structures

〇Tomohiro Tamano1, Kanako Shojiki1,2, Ryota Akaike1,3, Hiroki Yasunaga1,3, Takao Nakamura1,3, Masahiro Uemukai4, Tomoyuki Tanikawa4, Ryuji Katayama4, Hideto Miyake1,3 (1.Mie Univ., 2.Kyoto Univ., 3.IC-SDF, 4.Osaka Univ.)
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