[16a-A21-1~8] 15.4 III-V-group nitride crystals

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-A21-8] Study on AlN Surface Oxidation Process for Polarity-Inverted Stacking Structures

〇Tomohiro Tamano¹, Kanako Shojiki^1,2, Ryota Akaike^1,3, Hiroki Yasunaga^1,3, Takao Nakamura^1,3, Masahiro Uemukai⁴, Tomoyuki Tanikawa⁴, Ryuji Katayama⁴, Hideto Miyake^1,3 (1.Mie Univ., 2.Kyoto Univ., 3.IC-SDF, 4.Osaka Univ.)

Keywords:

nitride semiconductor,sputtering,polarity-inversion