[16a-A22-1~9] 13.7 Compound and power devices, process technology and characterization

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-A22-1] Measurement of surface temperature around the channel of GaN on-diamond HEMTs for integration

〇Hazuki Tomiyama¹, Hiroki Uratani², Yoshiki Sakaida², Yoshiki Nishibayashi³, Marika Takeuchi³, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ., 2.Air Water Inc., 3.Sumitomo Electric Industries, Ltd.)

Keywords:

polycrystalline diamond,GaN HEMT

We successfully realized GaN on-diamond HEMT structures using polycrystalline diamond on a backplate with the goal of achieving low-cost on-diamond structures. Using this device, we evaluated the surface temperature variation across the channel at the gate-to-drain aperture of the HEMTs, to suppress the temperature rise in the vicinity of the channel for integration.Compared to on-Si HEMTs, on-diamond HEMTs have a steeper temperature gradient in the close channel region, which is advantageous for high-density device integration.