The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[16a-A22-1~9]13.7 Compound and power devices, process technology and characterization

Mon. Sep 16, 2024 9:15 AM - 11:30 AM JST
Mon. Sep 16, 2024 12:15 AM - 2:30 AM UTC
A22 (TOKI MESSE 2F)
Takuji Hosoi(Kwansei Gakuin Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-A22-1]Measurement of surface temperature around the channel of GaN on-diamond HEMTs for integration

〇Hazuki Tomiyama1, Hiroki Uratani2, Yoshiki Sakaida2, Yoshiki Nishibayashi3, Marika Takeuchi3, Naoteru Shigekawa1, Jianbo Liang1 (1.Osaka Metropolitan Univ., 2.Air Water Inc., 3.Sumitomo Electric Industries, Ltd.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-A22-2]Fabrication and Characterization of GaN HEMT on Diamond

〇(M1)Yosei Sunamoto1, Yutaka Ohno2, Koji Inoue2, Yasuyoshi Nagai2, Naoteru Shigekawa1, Jianbo Liang1 (1.Osaka Metropolitan Univ., 2.IMR Tohoku Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-A22-3]Diamond Amplifier with Multi-finger Structure

〇(D)Ken Kudara1,2, Yuji Komatsuzaki1, Yutaro Yamaguchi1, Shintaro Shinjo1, Masakazu Arai2, Hiroshi Kawarada2 (1.Mitsubishi Electric Co., 2.Waseda Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)English Presentation

[16a-A22-4]Fabrication of High Off-State Voltage (4266 V) Diamond MOSFETs

〇Niloy Chandra Saha1, Toshiyuki Oishi1, Makoto Kasu1 (1.Saga Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-A22-5]1440 h Continuous Operation of Diamond MOS Field Effect Transistors

〇Tomoki Shiratsuchi1, Niloy Chandra Saha1, Toshiyuki Oishi1, Makoto Kasu1 (1.Saga Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16a-A22-6]Deep-level transient spectroscopy analysis of trap states in β-(AlxGa1-x)2O3/Ga2O3 modulation-doped field-effect transistors

〇Yun Jia1, Fenfen Fenda Florena1, Ryo Morita1, Aboulaye Traore1, Hironori Okumura1, Takeaki Sakurai1 (1.Univ. of Tsukuba)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-A22-7]Impact of δ-doping density on DC/RF characteristics of doble-doped InP-HEMT

〇Taro Sasaki1, Takuya Tsutsumi2, Hiroki Sugiyama1, Yuki Yoshiya1, Takuya Hoshi1, Fumito Nakajima1 (1.NTT Device Technology Labs., 2.Osaka Metropolitan Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-A22-8]Mechanism of change in threshold current for semiconductor lasers

〇Tetsuya Uetsuji1, Tomoki Oku1, Akitsugu Niwa1, Naoki Nakamura1 (1.Mitsubishi Electric)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-A22-9]Epitaxy of high breakdown voltage InP-based DHBTs with InP/InAlAs composite collector

〇Takuya Hoshi1, Yuta Shiratori1, Fumito Nakajima1 (1.NTT Device Technology Labs.)
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