[16a-A22-1~9] 13.7 Compound and power devices, process technology and characterization

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-A22-2] Fabrication and Characterization of GaN HEMT on Diamond

〇(M1)Yosei Sunamoto¹, Yutaka Ohno², Koji Inoue², Yasuyoshi Nagai², Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ., 2.IMR Tohoku Univ.)

Keywords:

Surface Activated Bonding Method,GaN,diamond

GaN-HEMTs face challenges related to performance and reliability degradation due to self-heating. Therefore, diamond substrates with high thermal conductivity are considered the most promising heat spreaders. By using a surface-activated bonding method (SAB), we created a GaN//Diamond junction structure by transferring GaN-HEMTs onto a diamond substrate. This resulted in increased output compared to conventional structures.