[16a-A22-1~9] 13.7 Compound and power devices, process technology and characterization

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-A22-3] Diamond Amplifier with Multi-finger Structure

〇(D)Ken Kudara^1,2, Yuji Komatsuzaki¹, Yutaro Yamaguchi¹, Shintaro Shinjo¹, Masakazu Arai², Hiroshi Kawarada² (1.Mitsubishi Electric Co., 2.Waseda Univ.)

Keywords:

Diamond,FET,Amplifier

We reports on an L-band diamond amplifier with a multi-finger structure. The 0.5 µm gate length atomic layer deposition two-dimensional hole gas diamond metal-oxide-semiconductor field-effect transistor, utilizing a multi-finger structure with a total gate width of 10 finger × 100 µm, aims to enhance high-frequency performance due to low gate resistance compared to a double-finger structure. It demonstrates large-signal operation over 2 GHz with a total gate width of more than 1 mm, marking a first in diamond field-effect transistor. The development of this amplifier was achieved using an atomic layer deposition two-dimensional hole gas diamond metal-oxide-semiconductor field-effect transistor, using a multi-finger structure with a total gate width of 10 finger × 50 µm, alongside printed circuit board and surface mount devices components. The resulting diamond amplifier exhibited linear gains of more than 7 dB and output power levels of 19.5, 20.4, and 20.7 dBm, with maximum drain efficiency of 4.0, 4.0, and 3.5 % achieved at 1.8 GHz, with drain voltages (V_DS) of −30 V, −35V, and −40 V, respectively. Among diamond amplifiers, this configuration demonstrated the highest output power performance.