[16a-A22-1~9] 13.7 Compound and power devices, process technology and characterization

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16a-A22-6] Deep-level transient spectroscopy analysis of trap states in β-(Al_xGa1-x)₂O₃/Ga₂O₃ modulation-doped field-effect transistors

〇Yun Jia¹, Fenfen Fenda Florena¹, Ryo Morita¹, Aboulaye Traore¹, Hironori Okumura¹, Takeaki Sakurai¹ (1.Univ. of Tsukuba)

Keywords:

Ultra Wide bandgap semiconductor,Deep level transient spectroscopy,Defect

In this work, the trap states in the fabricated β-(Al_xGa_1-x)₂O₃/β-Ga₂O₃ MODFET were investigated using deep-level transient spectroscopy (DLTS). DLTS signals from the SiO₂/(AlxGa1-x)₂O₃ interface and the (Al_xGa_1-x)₂O₃/β-Ga₂O₃ 2DEG region were analyzed using different pulse conditions. The density of interface states (N_ss) around 10¹³ cm^-2/eV was determined by saturating the DLTS peak amplitude, revealing a relatively high interface state density.