[16a-A22-1~9] 13.7 化合物及びパワーデバイス・プロセス技術・評価

10:30 〜 10:45奨励賞エントリー英語発表

[16a-A22-6] Deep-level transient spectroscopy analysis of trap states in β-(Al_xGa1-x)₂O₃/Ga₂O₃ modulation-doped field-effect transistors

〇Yun Jia¹, Fenfen Fenda Florena¹, Ryo Morita¹, Aboulaye Traore¹, Hironori Okumura¹, Takeaki Sakurai¹ (1.Univ. of Tsukuba)

キーワード：

Ultra Wide bandgap semiconductor、Deep level transient spectroscopy、Defect

In this work, the trap states in the fabricated β-(Al_xGa_1-x)₂O₃/β-Ga₂O₃ MODFET were investigated using deep-level transient spectroscopy (DLTS). DLTS signals from the SiO₂/(AlxGa1-x)₂O₃ interface and the (Al_xGa_1-x)₂O₃/β-Ga₂O₃ 2DEG region were analyzed using different pulse conditions. The density of interface states (N_ss) around 10¹³ cm^-2/eV was determined by saturating the DLTS peak amplitude, revealing a relatively high interface state density.