[16a-A22-1~9] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-A22-8] Mechanism of change in threshold current for semiconductor lasers

〇Tetsuya Uetsuji¹, Tomoki Oku¹, Akitsugu Niwa¹, Naoki Nakamura¹ (1.Mitsubishi Electric)

Keywords:

semiconductor,threshold current,activation energy

The threshold current fluctuation (d_Ith) of semiconductor lasers is believed to be caused by the generation and annihilation of non-radiative recombination centers (NRCs) in the active layer. For this reason, it has been proposed that NRCs are annihilated due to the diffusion of NRCs into the active layer when current is applied at high temperatures or due to temperature rise caused by internal losses. However, since the activation energy of annealing hole traps in p-InP determined by capacitance spectroscopy is as large as 1.32 eV and the temperature rise caused by internal losses is about 10°C, it was found that d_Ith could not be explained by the diffusion and annihilation of NRCs. Therefore, in this study, we hypothesize that the relationship between d_Ith and output power is due to the diffusion of NRCs, calculate the activation energy, and propose a mechanism for d_Ith.