[16a-A22-1~9] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-A22-9] Epitaxy of high breakdown voltage InP-based DHBTs with InP/InAlAs composite collector

〇Takuya Hoshi¹, Yuta Shiratori¹, Fumito Nakajima¹ (1.NTT Device Technology Labs.)

Keywords:

InP-based DHBT,InP/InAlAs composite collector,InGaAsSb base