[16a-B1-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-B1-3] Control of NMOS characteristics in minimal fab SOI-CMOS

〇Takeshi Hamamoto¹, Akihiro Yamazaki², Shiro Hara^1,2,3 (1.MINIMAL, 2.AIST, 3.Hundred)

Keywords:

SOI

Minimal fab is a production system targeted at high-mix low-volume production. Devices that have been adapted to this minimal fab include MEMS devices such as cantilevers, CMOS, and ring oscillators and operational amplifiers using CMOS. Operation verification of 1,000-gate level integrated circuits has already been completed, and they are now in the prototype fab stage. In the future, we will build a PDK (Process Design Kit) and focus on improving the operational accuracy of MOSFETs and ensuring process robustness in order to support circuit operation based on a wide range of user designs. In this study, we developed a method to control NMOS characteristics (threshold and drive current) by doping boron into the channel region by solid-phase diffusion and then changing the thickness of the oxide film.