[16a-B1-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-B1-7] Study of hydrogen annealing effect in tapered TSV holes Ⅱ

〇Hiroyuki Tanaka¹, Hiroshi Tokunaga², Yoshiyuki Nozawa³, Toshihiro Hayami³, Kazushige Sato^4,6, Kayo Tanoue⁵, Shiro Hara^1,6 (1.AIST, 2.MTC, 3.SPPT, 4.SAKAGUCHI, 5.KB, 6.MINIMAL)

Keywords:

Bosch,Anneal,TSV

We have reported that planarization by hydrogen annealing is effective in flattening the sidewalls that weakened areas of the interlayer insulating film caused by scallops and vertical stripes that appear during the deep etching Bosch process. However, verification of its effectiveness, that means its effect on the Cu plating process after the formation of the hydrogen annealed holes, was required. In this paper, we report the results of an analysis of the effects of hydrogen annealing on subsequent processes.